At its annual Imec Technology Forum USA in San Francisco, imec reports on the potential of using ruthenium (Ru) as a disruptive interconnect material for 3nm and beyond technology nodes.   High-aspect ratio Ru lines were shown to outperform conventional Cu metallization in two different implementation scenarios, i.e., (1) in buried power rail applications, and (2) as interconnects for advanced memory and logic applications by using subtractive metal etch.    Due to an increasing resistance-c...